Kunzel, H.H.KunzelBochnia, R.R.BochniaGibis, R.R.GibisHarde, P.P.HardePassenberg, W.W.Passenberg2022-03-082022-03-081989https://publica.fraunhofer.de/handle/publica/317059Redistribution of Mn and Be doping profiles during growth of MBE GaInAs have been analyzed by SIMS and CV-measurements. Contribution of diffusion in the homomaterial, diffusion across the heterointerface, and surface accumulation are clearly detected. The doping concentration related to the onset of the effects observed is in good agreement with the onset of surface roughening. Diffusion and accumulation are more pronounced in the case of Mn doping.enberylliumdiffusion in solidsdoping profilesgallium arsenideiii-v semiconductorsindium compoundsmanganesemolecular beam epitaxial growthsecondary ion mass spectrasemiconductor growthc-v measurementinterface diffusiondiffusionMBE-growthSIMSsurface accumulationdoping concentrationsurface rougheningGa0.47In0.53As621conference paper