ALD Al2O3/SiO2 Multilayers for c-Si Surface Passivation. Modification of Interface Properties by Voltage Stress and Plasma Treatments

Richter, ArminArminRichterPatel, HemangiHemangiPatelReichel, ChristianChristianReichelMasuch, PaulPaulMasuchBenick, JanJanBenickGlunz, StefanStefanGlunz2023-05-052023-05-052022Note-ID: 0000942Ehttps://publica.fraunhofer.de/handle/publica/441367enALD Al2O3/SiO2 Multilayers for c-Si Surface Passivation. Modification of Interface Properties by Voltage Stress and Plasma Treatmentspresentation