Kimmerle, AchimAchimKimmerleWoehl, RobertRobertWoehlWolf, AndreasAndreasWolfBiro, DanielDanielBiro2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23440010.1016/j.egypro.2013.07.2782-s2.0-84898730358We investigate the formation of deep Phosphorus diffusion profiles with low surface concentrations in one single diffusion step. Such processes are suited for front surface field formation for n-type back-contact back-junction (BC- BJ) silicon solar cells or p-type silicon solar cells with alternative metallization techniques. The deposition temperature allows accurate control of the sheet resistance whereas the temperature of the in-situ oxidation strongly influences the profile-depth and surface concentration. The newly developed process leads to low dark saturation current densities well below 30 fA/cm2 on alkaline-textured surfaces and low short circuit current loss at the front side. Due to their depth and adjustable surface concentration, the obtained profiles are promising for front-surface- fields (FSF) and novel n-type emitters. A first implementation in BC-BJ solar cells with aluminum-alloyed emitter shows a good blue response of the solar cells and an improved efficiency compared to the reference process by 0.6%abs.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikDotierung und DiffusionKontaktierung und StrukturierungHerstellung und Analyse von hocheffizienten SolarzellenPilotherstellung von industrienahen SolarzellenIndustrielle und neuartige Solarzellenstrukturenjournal article