Cwiklinski, MaciejMaciejCwiklinskiBrueckner, PeterPeterBruecknerLeone, StefanoStefanoLeoneKrause, SebastianSebastianKrauseFriesicke, ChristianChristianFriesickeMassler, HermannHermannMasslerQuay, RüdigerRüdigerQuayAmbacher, OliverOliverAmbacher2022-03-142022-03-142020https://publica.fraunhofer.de/handle/publica/40876310.1109/IMS30576.2020.92240412-s2.0-85094208190We report on two state-of-the-art G-band (140-220 GHz) GaN amplifiers. Employing a novel concept of a broadband and compact interstage matching network allows for incorporating a high number of gain stages. The first 10-stage amplifier (AMP1) can provide more than 15 dB of small-signal gain over a 60-GHz band (145-205 GHz) with a peak value of 30 dB at 155 GHz. This circuit can deliver up to 16.9 dBm of output power at 195 GHz. The second 10-stage amplifier (AMP2)shows on average 10 dB of small-signal gain from 162 GHz to 217 GHz. In this case, the output power reaches 15 dBm at 205 GHz. Both circuits show excellent RF-yield and homogeneity. To the best of our knowledge, this is the first demonstration of GaN-based amplifiers that are able to operate beyond 200 GHz. The circuits show also the highest ever-reported gain and output power at such high frequencies with GaN technology.enbroadbandG-band (140-220 GHz)gallium nitride (GaN)high electron mobility transistor (HEMT)monolithic microwave integrated circuit (MMIC)power amplifier (PA)667conference paper