Bach, H.-G.H.-G.BachUmbach, A.A.UmbachUnterborsch, G.G.UnterborschPassenberg, W.W.PassenbergMekonnen, G.G.G.G.MekonnenSchlaak, W.W.SchlaakSchramm, C.C.SchrammEbert, W.W.EbertWolfram, P.P.WolframWaasen, S. vanS. vanWaasenBertenburg, R.M.R.M.BertenburgJanssen, G.G.JanssenReuter, R.R.ReuterAuer, U.U.AuerTegude, F.-J.F.-J.Tegude2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/327384An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being composed of four HEMTs.enaluminium compoundsgallium arsenideHEMT integrated circuitsiii-v semiconductorsindium compoundsintegrated opticsintegrated optoelectronicsoptical receiversoptical waveguidesp-i-n photodiodestime division multiplexingultrafast GaInAs/AlInAs/InP photoreceiverwaveguide architectureInP-based photoreceiver oeicbandwidthpin-photodiodeintegrated optical waveguidecoplanar travelling wave amplifierHEMT ics27 GHzinpGaInAs-AlInAs-InP621conference paper