Kopp, F.F.KoppRosenits, PhilippPhilippRosenitsRoth, T.T.RothSchmich, EvelynEvelynSchmichReber, S.S.ReberWarta, WilhelmWilhelmWarta2022-03-1131.8.20122009https://publica.fraunhofer.de/handle/publica/36476710.4229/24thEUPVSEC2009-2DV.1.610.24406/publica-r-364767In this paper it is demonstrated how photoluminescence imaging (PLI) can serve to qualitatively and quantitatively characterize the properties of an epitaxial silicon layer. In the first part a set of microelectronic-grade samples is characterized electrically by determining the epitaxial layer lifetime. In the second part a set of samples for photovoltaic application is studied. In this case the focus is on the possibilities for a qualitative analysis of the thickness inhomogeneity of the epitaxial layer.en621697conference paper