Imaging defect luminescence measurements of 4H-SiC by UV-PL

Under CopyrightKaminzky, DanielDanielKaminzkyRoßhirt, KatharinaKatharinaRoßhirtKallinger, BirgitBirgitKallingerBerwian, PatrickPatrickBerwianFriedrich, JochenJochenFriedrichOppel, SteffenSteffenOppelSchneider, AdrianAdrianSchneiderSchütz, MichaelMichaelSchütz2022-03-1216.6.20152015https://publica.fraunhofer.de/handle/publica/38849310.24406/publica-fhg-388493ensemiconductorsilicon carbide4H-SiCstructural defectsdislocationsphotoluminescenceUV-PLDLS670620530Imaging defect luminescence measurements of 4H-SiC by UV-PLAbbildende Defektlumineszenz an 4H-SiC durch ultraviolette Photolumineszenzpresentation