Menschig, A.A.MenschigForchel, A.A.ForchelDammel, R.R.DammelLingnau, J.J.LingnauPongratz, S.S.PongratzScheunemann, U.U.ScheunemannTheis, J.J.Theis2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/177194The suitability of a newly developed X-ray resist for electron beam lithography has been investigated. RAY-PF is a Novolak-based three component system which uses a catalytic reaction to increase the sensitivity. The resist is found to have a high sensitivity of about 10 mu C/cm2 at 50 keV and a very good contrast ( gamma >4). RAY-PF is found to be suitable for high resolution lithography in the 100 nm range.enelectron resistsX-ray lithography621journal article