Kasalynas, I.I.KasalynasSeliuta, D.D.SeliutaSimniskis, R.R.SimniskisTamosiunas, V.V.TamosiunasVaicikauskas, V.V.VaicikauskasGrigelionis, I.I.GrigelionisNedzinskas, R.R.NedzinskasKöhler, KlausKlausKöhlerValusis, G.G.Valusis2022-03-102022-03-102008https://publica.fraunhofer.de/handle/publica/35925910.1109/ICIMW.2008.4665701A bow-tie InGaAs with broken symmetry has been designed for terahertz detection at room temperature. An active part of the detector consists of a two-dimensional electron gas which is heated non-uniformly with incident radiation. Main detector performances are operation in a passive scheme, flat frequency response up to 1 THz, the voltage sensitivity of about 5 V/W, the noise equivalent power of roughly 10 nW/Hz(exp 1/2), and the response time less then 7 ns.enIII-V semiconductorIII-V HalbleiterheterostructureHeterostrukturelectrical propertyelektrische Eigenschaft667conference paper