Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation

Maroldt, S.S.MaroldtHaupt, C.C.HauptPletschen, WilfriedWilfriedPletschenMüller, StefanStefanMüllerQuay, RüdigerRüdigerQuayAmbacher, OliverOliverAmbacherSchippel, C.C.SchippelSchwierz, F.F.Schwierz2022-03-042022-03-042009https://publica.fraunhofer.de/handle/publica/21841810.1143/JJAP.48.04C083enGaNE-HEMThigh transconductancehohe SteilheitefficiencyEffizienzmicrowave power amplifierMikrowellen-Leistungsverstärker667530Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operationGate-Recess AlGaN/GaN basierte enhancement-mode High Electron Mobility Transistoren für Hochfrequenzanwendungenjournal article