Thome, FabianFabianThomeJohn, LaurenzLaurenzJohnGashi, BersantBersantGashiTessmann, AxelAxelTessmannLeuther, ArnulfArnulfLeutherChartier, SébastienSébastienChartier2024-01-032024-01-032023https://publica.fraunhofer.de/handle/publica/45838110.1109/IGARSS52108.2023.10282876This paper presents recent results in our in-house 35-nm gate-length metamorphic high-electron-mobility transistor (mHEMT) technology and the more-recent 20-nm gatelength InGaAs-on-insulator HEMT technology. Targeting highest operating frequencies for cutting-edge sensitive receiver systems, demonstrated circuits comprise amplifiers up to 700 GHz with more than 30 dB of small-signal gain. Furthermore, the paper presents state-of-the-art distributed amplifier circuits for a multitude of wideband system applications and the generation of high output power at frequencies of beyond 300 GHz. Presented amplifier circuits exhibit an output power of more than 10 dBm over an operating frequency of 75-305 GHz.enDistributed amplifiers (DAs)highelectron-mobility transistors (HEMTs)low-noise amplifiers (LNAs)metamorphic HEMTs (mHEMTs)millimeter wave (mmW)monolithic microwave integrated circuits (MMICs)terahertz monolithic integrated circuits (TMICs)travelingwave amplifiers (TWAs)conference paper