Palankovski, V.V.PalankovskiQuay, RüdigerRüdigerQuaySelberherr, S.S.Selberherr2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/33552710.1109/GAAS.2000.906305We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. Results for Heterostructure Bipolar Transistors (HBTs) and for High Electron Mobility Transistors (HEMTs) are presented in good agreement with measured data of industrially relevant devices.enHBTHEMTheterostructureHeterostrukturIII-V semiconductorIII-V Halbleitersimulation tool621667conference paper