Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain

Wolf, H.H.WolfGieser, H.H.GieserStadler, W.W.Stadler2022-03-032022-03-031999https://publica.fraunhofer.de/handle/publica/19437010.1016/S0026-2714(99)00074-82-s2.0-0033221351en621Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domainjournal article