Rattunde, MarcelMarcelRattundeSchulz, N.N.SchulzRösener, B.B.RösenerManz, ChristianChristianManzKöhler, KlausKlausKöhlerWagner, J.J.WagnerHopkins, J.-M.J.-M.HopkinsBurns, D.D.Burns2022-03-102022-03-102008https://publica.fraunhofer.de/handle/publica/35912510.1117/12.762873We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 µm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 µm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 µm and >5W at 2.0 µm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M(exp 2) values around 1.2; and even for the highest power levels, M(exp 2) is in the range of 2-5.enIII-V semiconductorIII-V HalbleiterinfraredInfrarotsingle modeGrundmode667conference paper