Stiebel, D.D.StiebelPichler, P.P.Pichler2022-03-032022-03-032003https://publica.fraunhofer.de/handle/publica/20406110.1007/s00339-002-1946-yTransient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simu-lation of such phenomena with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron interstitial clusters.ensilicontransient diffusionself-interstitial clusterboron-interstitial cluster670620530621journal article