Galler, B.B.GallerDrechsel, P.P.DrechselMonnard, R.R.MonnardRode, P.P.RodeStauss, P.P.StaussFroehlich, S.S.FroehlichBergbauer, W.W.BergbauerBinder, M.M.BinderSabathil, M.M.SabathilHahn, B.B.HahnWagner, J.J.Wagner2022-03-042022-03-042012https://publica.fraunhofer.de/handle/publica/22991810.1063/1.4754688High-efficiency InGaN-based light-emitting diodes have been grown on (111) silicon substrates and investigated with regard to efficiency and carrier lifetime as a function of current density. Using a single quantum well active layer ensures a well-defined active volume which enables the precise determination of the recombination coefficients in the ABC rate model for different emission wavelengths and junction temperatures. Good agreement of the resulting C values with calculated Auger coefficients is found both with respect to absolute value as well as their dependence on bandgap energy and temperature.en667621journal article