Schmitz, J.J.SchmitzWagner, J.J.WagnerFuchs, F.F.FuchsHerres, N.N.HerresKoidl, P.P.KoidlRalston, J.D.J.D.Ralston2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18680510.1016/0022-0248(95)80061-GSeveral issues related to the interface structure in molecular-beam epitaxially grown InAs/AlSb and InAs/GaSb heterostructures are investigated by Raman scattering, photoluminescence and X-ray measurements. The measurements reveal differing degrees of layer intermixing at the interfaces (IFs), greatest for AlAs-like IFs in the InAs/AlSb material system, less pronounced for GaAs-like IFs in the InAs/GaSb material system, and smallest for InSb like IFs in both systems. This intermixing is both thermodynamically favoured and, in addition, driven by a lowering of the strain-induced component of the surface energy.enInAs/AlSb GrenzflächeInAs/AlSb interfaceMBEQW621667548Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxyOptische und strukturelle Untersuchungen von Durchmischungsreaktionen an den Grenzflächen von InAs/AlSb und InAs/GaSb Quantum Wells hergestellt mit Molekularstrahlepitaxiejournal article