Künzel, H.H.KünzelGrote, N.N.GroteAlbrecht, P.P.AlbrechtBöttcher, J.J.BöttcherBornholdt, C.C.Bornholdt2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18226710.1049/el:19920534The MBE growth of In0.52Ga0.18Al0.30As ( lambda g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda =1.55 mu m but concomitantly high resistivity of >104 Omega cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at lambda =1.55 mu m.enaluminium compoundsgallium compoundsiii-v semiconductorsindium compoundsintegrated opticsmolecular beam epitaxial growthoptical waveguidesrefractive indexsemiconductor epitaxial layersrib waveguidesmbe growthtemperature rangepropagation lossesresistivity1.06 micron1.55 micron400 to 450 c1e4 ohmcmin0.52ga0.18al0.30as-InPInP substrate621384journal article