Kunzel, H.H.KunzelBottcher, J.J.BottcherGibis, R.R.GibisUrmann, G.G.Urmann2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18227610.1063/1.107587Undoped Ga0.47In0.53As layers were grown by molecular beam epitaxy lattice matched to InP at substrate temperatures, Ts, in the range from 100 to 600 degrees C. X-ray diffraction indicated a widening of the vertical lattice parameter and a simultaneous increase of the arsenic content at low growth temperature. The epitaxial layers were single-crystalline down to Ts=125 degrees C. The room-temperature residual carrier concentrations and the related mobilities for layers grown below 350 degrees C are strongly affected by Ts, whereas at 77 K an influence of Ts on these parameters is already visible at 450 degrees C. At the very low growth temperatures the epitaxial layers show highly conductive behaviour attributed to defect induced ionized deep centers.encarrier densitycarrier mobilitydeep levelsgallium arsenideiii-v semiconductorsindium compoundsmolecular beam epitaxial growthsemiconductor epitaxial layerssemiconductor growthx-ray diffraction examination of materialssemiconductorsmolecular beam epitaxy lattice matchedx-ray diffractioncarrier concentrationsdefect induced ionized deep centers100 to 600 degc77 k300 kinpga0.47in0.53as-InP621journal article