Dennler, P.P.DennlerRaay, Friedbert vanFriedbert vanRaaySeelmann-Eggebert, M.M.Seelmann-EggebertQuay, RüdigerRüdigerQuayAmbacher, OliverOliverAmbacher2022-03-112022-03-112011https://publica.fraunhofer.de/handle/publica/37154410.1109/MWSYM.2011.59727852-s2.0-80052341864This paper reports on linear and nonlinear modeling and realization of AlGaN/GaN dual-gate HEMTs and high power amplifier (HPA) MMICs for Ku-band applications. A method to describe the extrinsic and intrinsic parts of the dual-gate structure separated from each other using a distributed modeling approach is demonstrated. A small-signal model based on this approach was developed. A scalable nonlinear model was obtained through enhancing the small-signal model by an intrinsic large-signal statespace kernel. The excellent capabilities of both the linear and nonlinear models are demonstrated on fabricated dual-gate HEMTs with 0.25 µm gate length and a total gate width between 0.3mm and 0.8mm with a varying number of fingers. A 14-18 GHz, 2.5W high power amplifier was designed and realized to illustrate the suitability of the developed models for MMIC design.enAlGaN/GaNcascodedual-gateHEMTsKu-Bandlarge-signal modelingpower amplifierMMIC667conference paper