Hürner, AndreasAndreasHürnerMitlehner, HeinzHeinzMitlehnerErlbacher, TobiasTobiasErlbacherBauer, A.J.A.J.BauerFrey, LotharLotharFrey2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39450010.4028/www.scientific.net/MSF.858.917In this study, the potential of forward conduction loss reduction of Bipolar-Injection Field-Effect-Transistors (SiC-p-BIFET) with an intended blocking voltage of 10kV by adjusting the doping concentration in the channel-region is analyzed. For the optimization of the SiC-p-BIFET, numerical simulations were carried out. Regarding a desired turn-off voltage of approximately 25V, the optimum doping concentration in the channel-region was found to be 1.4x1017cm-3. Based on these results, SiC-p-BIFETs were fabricated and electrically characterized in the temperature range from 25°C up to 175°C. In this study, the differential on-resistance was found to be 110mOcm2 for a temperature of 25°C and 55mOcm2 for a temperature of 175°C. In comparison to our former results, a reduction of the differential on-resistance of about 310mOcm2 at room temperature is demonstrated.enBIFETBipolarhigh-voltagesolid-state-circuit breakerelectric circuit breakerssemiconductor junctionssilicon carbidebipolar injectiondoping concentrationtemperature rangeturn-off voltageconference paper