Investigation of the ammonia sensitivity of different MOS-transistors

Dobos, K.K.DobosZimmer, G.G.Zimmer2022-03-082022-03-081987https://publica.fraunhofer.de/handle/publica/315728A split gate and a very thin Pt and Pd metal gate MOS-Transistor as an ammonia sensor was developed and investigated. These transistors showed a good ammonia sensitivity. (IMS)en621Investigation of the ammonia sensitivity of different MOS-transistorsconference paper