SIMOX and wafer bonding, combination of competitors complements one another

Gassel, H.H.GasselVogt, H.H.Vogt2022-03-082022-03-081993https://publica.fraunhofer.de/handle/publica/321532enÄtzenÄtzgeschwindigkeitburied etch stopetch rateetchingsilicon-on-insulatorSIMOXwafer bonding621SIMOX and wafer bonding, combination of competitors complements one anotherconference paper