Reinert, W.W.ReinertHülsmann, A.A.HülsmannSchneider, J.J.SchneiderBosch, R.R.BoschKaufel, G.G.KaufelKöhler, KlausKlausKöhlerRaynor, B.B.RaynorWennekers, P.P.Wennekers2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/181086A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3 Mym gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30 dB gain and 6.5 GHz bandwidth. Matching extends the bandwidth to 9.0 GHz. In mixer mode at 12 GHz input frequency and 1.5 GHz IF frequency the chip shows 11.5 dB conversion gain. The chip has a power dissipation of 125 mW at a supply voltage of 3.50 V.enamplifierFeldeffekttransistorfield effect transistorHalbleiterheteroübergangsemiconductor junctionVerstärker621667384journal article