May, AlexanderAlexanderMayRommel, MathiasMathiasRommelBaier, LeanderLeanderBaierSchraml, MichaelMichaelSchramlDick, Jan F.Jan F.DickJank, MichaelMichaelJankSchulze, JörgJörgSchulze2024-12-202024-12-202024-04-16https://publica.fraunhofer.de/handle/publica/48092910.1109/SSI63222.2024.10740550In order to provide an option for fabrication of high temperature sensing and circuit solutions, an accessible 4H-SiC high temperature CMOS technology was developed. A detailed overview of the fabrication process is given, with options for lateral power transistor integration, threshold voltage manipulation, optimization of interface state density, dedicated p-type ohmic contacts and two high temperature metallization layers. To prove high temperature device operation capability, device characteristics above 500 °C are presented. Examples include an inverter as a basic logic building block and a lateral power transistor with a blocking voltage of over 700 V. Finally, lateral integrated UV photodiodes based on a p-n junction are presented as a sensor application example. In collaboration with different partners, more complex integrated circuits and smart sensing solutions have also been realized and demonstrated previously, highlighting the possibilities if this technology.enCMOSdevice fabricationhigh temperatureICsLDMOSsensorsSiCtechnology platformUV photodiodeconference paper