Böttner, H.H.BöttnerLambrecht, A.A.LambrechtSchlereth, K.-H.K.-H.SchlerethSpanger, B.B.SpangerTacke, M.M.Tacke2022-03-082022-03-081988https://publica.fraunhofer.de/handle/publica/314803DH-lasers with PbEuSe confinement and PbSe active layers were grown by MBE. Mesas were formed and overgrown with PbEuSe. The lasers operate cw at threshold currents of 4 mA (30 K), 8 mA (80 K) and between 1280 cm-1 (30 K) and 1800 cm-1 (160 K). The spectral characteristics of these lasers are superior to comparable DH stripe lasers. MBE was used for the first time with success for overgrowth of lateral structure.enDH-LaserIR-Diodenlaservergrabene WellenleiterWellenleiter621conference paper