Guter, WolfgangWolfgangGuterSchöne, J.J.SchönePhilipps, Simon P.Simon P.PhilippsSteiner, MarcMarcSteinerSiefer, GeraldGeraldSieferWekkeli, AlexanderAlexanderWekkeliWelser, E.E.WelserOliva, EduardEduardOlivaBett, Andreas W.Andreas W.BettDimroth, FrankFrankDimroth2022-03-042022-03-042009https://publica.fraunhofer.de/handle/publica/21897610.1063/1.3148341A metamorphic Ga0.35In0.65P/Ga0.83In0.17As/Ge triple-junction solar cell is shown to provide current-matching of all three subcells and thus composes a device structure with virtually ideal band gap combination. We demonstrate that the key for the realization of this device is the improvement of material quality of the lattice-mismatched layers as well as the development of a highly relaxed Ga1-yInyAs buffer structure between the Ge substrate and the middle cell. This allows the metamorphic growth with low dislocation densities below 10(6) cm(-2). The performance of the approach has been demonstrated by a conversion efficiency of 41.1% at 454 suns (454 kW/m(2), AM1.5d ASTM G173-03).enIII-V-Solarzellen621journal article