Reier, F.W.F.W.ReierBornholdt, C.C.BornholdtHoffmann, D.D.HoffmannKappe, F.F.KappeMörl, L.L.Mörl2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/32735910.1109/ICIPRM.1996.492268In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material.engallium arsenideiii-v semiconductorsindium compoundsoptical waveguidesquantum confined stark effectsemiconductor growthsemiconductor quantum wellssubstratesthermal stabilityvapour phase epitaxial growthmovpe growth conditionssubstrate parametersstructural qualitymulti-period InGaAsP/InP mqw structuresgas exchange procedurecarry-over effectsmqw structuresbuffer layerInGaAsP-InP621conference paper