Lisauskas, A.A.LisauskasBlöser, C.C.BlöserSachs, R.R.SachsRoskos, H.G.H.G.RoskosJuozapavicius, A.A.JuozapaviciusValusis, G.G.ValusisKöhler, KlausKlausKöhler2022-03-032022-03-032005https://publica.fraunhofer.de/handle/publica/2089322-s2.0-14644421588We apply time-resolved photocurrent and differential electroreflectance spectroscopy to study the evolution of the internal field in a GaAs/ AlGaAs superlattice after pulsed optical excitation at low temperature. The electric field dynamics is investigated by tracing the spectral position of the Wannier-Stark transitions as a function of delay time. We determine the electron sweep-out time, extract detailed information about the picosecond-time-scale drift of the charge carriers by comparing the measured data with the results of semi-classical self-consistent model calculations, and evaluate the two experimental techniques with respect to their ability to provide information about the carrier and field dynamics.enIII-V semiconductorIII-V HalbleitersuperlatticeÜbergitteroptical spectroscopyoptische Spektroskopie621667530journal article