High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates

Leone, StefanoStefanoLeoneGodejohann, Birte-JuliaBirte-JuliaGodejohannBrueckner, PeterPeterBruecknerKirste, LutzLutzKirsteManz, ChristianChristianManzSwoboda, MarkoMarkoSwobodaBeyer, ChristianChristianBeyerRichter, JanJanRichterQuay, RüdigerRüdigerQuay2022-03-142022-03-142018https://publica.fraunhofer.de/handle/publica/403620AlGaN/GaN High Electron Mobility Transistors (HEMT) for RF application have been manufactured on SiC substrates thinned with a cold-split method, which allows a cost-effective wafering process. A properly tuned epitaxial growth process allowed depositing very uniform epitaxial layers, and the devices realized on those layers exhibited state of the art characteristics of HEMTs realized on standard substrates. This constitutes a successful first step for introducing an alternative wafering technology which significantly decreases material costs for SiC devices - without device performance degradation. It also proves the robustness of the epitaxial process and its adaptability to thinner SiC substrates.enHEMTMOCVDcold-splitRF device667High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substratesconference paper