Weisser, S.S.WeisserRalston, J.D.J.D.RalstonLarkins, E.C.E.C.LarkinsEsquivias, I.I.EsquiviasTasker, P.J.P.J.TaskerFleissner, J.J.FleissnerRosenzweig, JosefJosefRosenzweig2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18121110.1049/el:19921374The authors demonstrate p-type modulation-doped strained-layer Insub0.35Gasub0.65As/GaAs multiquantum well lasers which achieve a 3 dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50 mA in a simple 3 x 200 My square meter mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.enHalbleiterlasersemiconductor laser621667384journal article