Wang, Z.-G.Z.-G.Wang2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18171310.1049/el:19920346A high-performance varactorless VCO is introduced, that uses a capacitively-coupled current amplifier as the active device. The test VCO IC realised in a 2 Mym Si bipolar process exhibits a maximum centre frequency of 2 *5GHz, a time jitter of 2 *5ps at 2 GHz, and temperature coefficient of less than 100 ppm/degree C.enbipolar devicebipolares Bauelementintegrated circuitintegrierte SchaltungoscillatorOszillator621667384Multigigahertz varactorless Si bipolar VCO IC.Multigigahertz Si-Bipolar VCO IC ohne Varaktorjournal article