Arzig, M.M.ArzigSalamon, M.M.SalamonUhlmann, N.N.UhlmannJohansen, B.A.B.A.JohansenWellmann, P.J.P.J.Wellmann2022-03-142022-03-142018https://publica.fraunhofer.de/handle/publica/40237810.4028/www.scientific.net/MSF.924.245Two 3inch SiC boules were grown in a PVT setup using source material of different packing density. During the growth, in-situ computed tomography of the growing boules showed differences in the development of the growth interface. A slightly bent growth interface was found for the smaller packing density. For the higher packing density the resulting crystal exhibits the onset of 6 pyramidal facets on its flanks. Besides that, strong anisotropic lateral growth was found on its (000-1) facet. Numerical simulations show an impact of the powder on the thermal gradient in the growth cell and therefore on the supersaturation. It is discussed that a higher supersaturation can account for the anisotropy in the growth rate of the [1-100] and the [11-20] direction.en621006conference paper