Jang, I.I.JangKim, J.J.KimIppen, C.C.IppenGreco, T.T.GrecoOh, M.S.M.S.OhLee, J.J.LeeKim, W.K.W.K.KimWedel, A.A.WedelHan, C.J.C.J.HanPark, S.K.S.K.Park2022-03-042022-03-042015https://publica.fraunhofer.de/handle/publica/23914210.7567/JJAP.54.02BC01The present work shows the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a solgel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). In contrary to high annealing temperature (>200 °C) for conventional ZnO films, low temperature annealing (∼150 °C) was performed for solgel derived ZnO film. The performance of the inverted QD-LEDs was efficiently improved by optimization of the annealing time and temperature of ZnO ETL. The current efficiency was significantly improved about 215% by lowering annealing temperature of ZnO ETL.en530journal article