Rösener, B.B.RösenerRattunde, MarcelMarcelRattundeMoser, R.R.MoserKaspar, S.S.KasparTöpper, T.T.TöpperManz, ChristianChristianManzKöhler, KlausKlausKöhlerWagner, J.J.Wagner2022-03-042022-03-042011https://publica.fraunhofer.de/handle/publica/22444510.1364/OL.36.000319We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2:8 µm. Up to 120 mW of output power were obtained in cw operation and more than 500 mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.en667535journal article