Burenkov, AlexAlexBurenkovLorenz, JürgenJürgenLorenzSpiegel, YohannYohannSpiegelTorregrosa, FrankFrankTorregrosa2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38700710.1109/IIT.2014.6940004Plasma immersion ion implantation from AsH3 plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×1022 cm-3 and penetration depths below 10 nm at a concentration of 1×1018 cm-3 were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF3 plasma and a new one that accounts for the specifics of AsH3 plasma.enplasma immersion ion implantationAsH3 plasmadoping profilessiliconsimulationSIMSconference paper