Defect functional structures of 4H-SiC and diamond induced by ion implantation: MD simulation and spectral characterization

Under CopyrightXu, ZongweiZongweiXuZhao, JunleiJunleiZhaoDjurabekova, FlyuraFlyuraDjurabekovaRommel, MathiasMathiasRommelNordlund, KaiKaiNordlund2022-03-1423.10.20182018https://publica.fraunhofer.de/handle/publica/40188010.24406/publica-fhg-401880ensilicon carbidediamonddefection implantationMD simulationcharacterization670620530Defect functional structures of 4H-SiC and diamond induced by ion implantation: MD simulation and spectral characterizationpresentation