Kuppadakkath, AthiraAthiraKuppadakkathNajafidehaghani, EmadEmadNajafidehaghaniGan, ZiyangZiyangGanTuniz, AlessandroAlessandroTunizQuyet Ngo, GiaGiaQuyet NgoKnopf, HeikoHeikoKnopfLöchner, Franz J. F.Franz J. F.LöchnerAbtahi, FatemehFatemehAbtahiBucher, TobiasTobiasBucherShradha, SaiSaiShradhaKäsebier, ThomasThomasKäsebierPalomba, StefanoStefanoPalombaFelde, NadjaNadjaFeldePaul, PallabiPallabiPaulUllsperger, TobiasTobiasUllspergerSchröder, SvenSvenSchröderSzeghalmi, AdrianaAdrianaSzeghalmiPertsch, ThomasThomasPertschStaude, IsabelleIsabelleStaudeZeitner, Uwe DetlefUwe DetlefZeitnerGeorge, AntonyAntonyGeorgeTurchanin, AndreyAndreyTurchaninEilenberger, FalkFalkEilenberger2023-01-112023-01-112022https://publica.fraunhofer.de/handle/publica/43086410.1515/nanoph-2022-0235We report for the first time the direct growth of molybdenum disulfide (MoS2) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals material grow conformally across the curves, edges, and the silicon–SiO2 interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO2) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.en2D materialsexcitonic photoluminescenceintegrated photonicstransition metal dichalcogenidesjournal article