Möller, C.C.MöllerBöttcher, J.J.BöttcherKünzel, H.H.Künzel2022-03-102022-03-102003https://publica.fraunhofer.de/handle/publica/34444610.1117/12.514616The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7×10-5 /cm2 and a peak current density of > 1900 A/cm2. The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.en621conference paper