Homoepitaxial growth and defect characterization of 4H-SiC

Under CopyrightKallinger, BirgitBirgitKallingerKranert, ChristianChristianKranertSchade, Zara MercedesZara MercedesSchadeRommel, MathiasMathiasRommelBerwian, PatrickPatrickBerwian2022-09-262022-09-262022https://publica.fraunhofer.de/handle/publica/426974https://doi.org/10.24406/publica-35610.24406/publica-356en4H-Silicon Carbide (SiC)homoepitaxial growthextended defectspoint defectsHomoepitaxial growth and defect characterization of 4H-SiCmeeting abstract