CC BY 4.0Krause, SebastianSebastianKrauseStreicher, IsabelIsabelStreicherWaltereit, PatrickPatrickWaltereitKirste, LutzLutzKirsteBrückner, PeterPeterBrücknerLeone, StefanoStefanoLeone2023-02-242023-02-242023https://publica.fraunhofer.de/handle/publica/437019https://doi.org/10.24406/publica-95610.1109/LED.2022.322087710.24406/publica-956We report on DC and RF measurement results of AlScN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD). Comparing the properties with those of a wafer grown with the same MOCVD tool but featuring an AlGaN barrier, the sheet carrier density ( n(s) ) of 1.50×10^13 cm ^-2 measured on the AlScN/GaN wafer is around 60 % higher. This translates to a power density ( Pout ) of 8.4 W/mm at a frequency of 30 GHz and a drain bias of 30 V. Also, a high power-added efficiency (PAE) of 48.9% and 46.1% is reached, when biased at 25 V and 30 V, respectively. These early results illustrate the great potential AlScN/GaN devices carry for improving on the achievable output power on device level at millimeter-wave (mmWave) frequencies.enAlScNScAINGaNMOCVDHEMTsmillimeter-waveKa-bandsmall-signallarge-signaldispersionjournal article