Lang, RobinRobinLangSchön, JonasJonasSchönGodejohann, Birte-JuliaBirte-JuliaGodejohannLefèvre, JérémieJérémieLefèvreBoizot, BrunoBrunoBoizotDimroth, FrankFrankDimrothLackner, DavidDavidLackner2022-03-152022-03-152020Note-ID: 000038F2https://publica.fraunhofer.de/handle/publica/41224010.1109/PVSC45281.2020.9300639As an answer to increased demand for more radiation tolerant solar cells for space applications, we investigate the dependence of radiation hardness of III-V compounds on composition of InGaAsP. Four solar cells with different composition were grown on InP and metamorphically on GaAs and irradiated with 1 MeV electrons. A simulation-based analysis was used to determine the material specific irradiation damage. In addition, the regeneration ability is investigated under typical operating conditions (60 °C and AM0 illumination) and under the ECSS standard. While a clear decrease in radiation damage compared to GaAs is observed in all samples, the effect is stronger with increasing InP-fraction. The irradiation induced defect recombination coefficient can be described with a linear function of InP-fraction.enannealingGaInAsPIII-V solar cellsMOVPEspace solar cell621697conference paper