Wieland, R.R.WielandZoschke, K.K.ZoschkeJürgensen, N.N.JürgensenMerkel, R.R.MerkelNebrich, L.L.NebrichWolf, J.J.Wolf2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36928110.1109/3DIC.2010.5751469A silicon-interposer technology with high density Cu-filled TSVs and Cu-based redistribution layers was realized. Test structures in a process control module were used for electrical characterization.en621conference paper