Himcinschi, C.C.HimcinschiRadu, I.I.RaduMuster, F.F.MusterSingh, R.R.SinghReiche, M.M.ReichePetzold, M.M.PetzoldGösele, U.U.GöseleChristiansen, S.H.S.H.Christiansen2022-03-102022-03-102007https://publica.fraunhofer.de/handle/publica/35471310.1016/j.sse.2007.01.0182-s2.0-33847244922Uniaxial strain on wafer-level was realised by mechanically bending and direct wafer bonding of Si wafers in the bent state followed by thinning one of the Si wafers by the smart-cut process. This approach is flexible and allows to obtain different strain values at wafer-level in both tension and compression. UV micro-Raman spectroscopy was used to determine the strain in the thin transferred Si layers. Numerical modelling by 3D finite elements of the strain provided a good description of the experimental results.enwaferbondingstrained siliconuniaxial strainraman spectroscopy620conference paper