Lao, Z.Z.LaoBerroth, M.M.BerrothRieger-Motzer, M.M.Rieger-MotzerThiede, A.A.ThiedeHurm, V.V.HurmSedler, M.M.SedlerBronner, WolfgangWolfgangBronnerHülsmann, A.A.HülsmannRaynor, B.B.Raynor2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/325875A static and a dynamic frequency divider based on enhancement and depletion 0.2 mu m gate length AlGaAs/GaAs-HEMT (fT. = 60 / 55 GHz) technology were designed and fabricated. High-speed operations up to 31 GHz and 39 GHz for the static and dynamic frequency divider, respectively, have been achieved. The single-ended input and differential output to ground simplify many applications. The power consumption is 400 mW using two supply voltages of 3.3 V and -2.5 V for the static divider, and 450 mW using 3.8 V and -2.5 V for the dynamic divider.enHEMThigh speed frequency dividerHochgeschwindigkeits-Frequenzteiler621667conference paper