Huerner, A.A.HuernerHeckel, T.T.HeckelEnduschat, A.A.EnduschatErlbacher, T.T.ErlbacherBauer, A.J.A.J.BauerFrey, L.L.Frey2022-03-132022-03-132018https://publica.fraunhofer.de/handle/publica/40078010.4028/www.scientific.net/MSF.924.901In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.enbody-diodegate-voltageMOSFETSilicon Carbide (SiC)670620530conference paper