Bielefeld, J.J.BielefeldPelz, G.G.PelzAbel, H.B.H.B.AbelZimmer, G.G.Zimmer2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/32314110.1109/SOI.1994.514203Modeling of the self-heating effect in SOI MOSFET's recently led to static and small-signal models of this device. Nevertheless, large-signal models taking into account this effect are not available yet. We fill this gap by presenting a large-signal electrothermal model of the SOI MOSFET for the simulator SPICE. The whole model is formulated as a set of algebraical and partial differential equations which is converted automatically by the model translator MEXEL into SPICE3 netlist. The dynamics of the self-heating process will be shown by several simulations.encircuit simulationelectric heatmetal-oxide-semiconductor FETMOS-TransistorSchaltungssimulationSimulationsmodellStrömungssensortransistor modelTransistormodell621conference paper