Clemens, H.H.ClemensVoiticek, A.A.VoiticekHolzinger, A.A.HolzingerBauer, G.G.Bauer2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/17867110.1016/0022-0248(90)90863-GThe influence of preheating time and temperature of (111) oriented BaF2 substrates on the crystalline epitaxial perfection of 4 - 6 film growth is investigated by in situ reflection high energy electron diffraction, and after growth, by X-ray diffraction and electron channelling patterns. A preheating temperature of 500 degree C for 10 min yields excellent epitaxial film relation ship and perfect overgrowth.enBaF2epitaxyHalbleiterIV-VI compoundIV-VI-Verbindungmolecular beamMolekularstrahlepitaxiesemiconductor621548Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV-VI compounds.Einfluà der BaF2 Substratpräparation auf die strukturelle Perfektion von epitaktisch gewachsenen IV-VI-Verbindungenjournal article