Quay, RüdigerRüdigerQuayHess, K.K.HessReuter, R.R.ReuterSchlechtweg, M.M.SchlechtwegGrave, T.T.GravePalankovski, V.V.PalankovskiSelberherr, S.S.Selberherr2022-03-032022-03-032001https://publica.fraunhofer.de/handle/publica/19948710.1109/16.902718We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-NT. In this context, we discuss dc and RF performance issues for pseudomorphic AlGaAs/InGaAs/GaAs HEMTs that are especially relevant for gate-lengths of about 150 nm. All results are compared to and found to be consistent with experimental data for devices processed in tow different foundries.enelectron emissionElektronenemissionequivalent circuitsMODFETsemiconductor heterojunctionsimulationsimulation softwarethermic emission621667Nonlinear electronic transport and device performance of HEMTsÜber nichtlinearen Elektronentransport und Leistungsvermögen von HEMTsjournal article