Hülsmann, A.A.HülsmannBecker, F.F.BeckerHornung, J.J.HornungKöhler, D.D.KöhlerSchneider, J.J.Schneider2022-03-092022-03-091997https://publica.fraunhofer.de/handle/publica/328131We have developed an edge-phase-shifting (EPS) lithography for the fabrication of sub 0.3 mu m T-gates using a 5x i-line stepper with a 0.4 numerical aperture lens. Two exposures have to be accurately aligned on each other within 150 nm. The first exposure uses EPS lithography and defines the gate length in a negative resist. The second exposure defines the cross-section of the T-gate. Using this lithography, hetero structure field effect transistors (HFETs) can be fabricated.enHFETphase-shifting lithographyphasenschiebende LithographieT-gate621667conference paper